CMOS, BiCMOS, and Bipolar Process Integrationa 2-day course, presents the physics behind mixed-signal integrated circuit operation and processing technologies. We emphasize current issues related to designing and manufacturing next-generation devices.
What the Course Covers:
Topics:
Introduction and Basic Definitions
Junction and Oxide Isolation
Device isolation
Isolation technique
Junction & oxide isolation
Emitter isolation
Isolation length
LOCOS
Definition
Basic concepts
Steps of fabricating LOCOS
Trench isolation
Definition of shallow trench
Definition of deep trench isolation
Comparison of STI & LOCOS
Shallow trench isolation
CMP for STI
Deep trench isolation
Fabrication process of deep trench isolation
Silicon on insulator techniques (SOI)
Definition of SOI
Industrial need of SOI
SOI techniques
Methods of SOI isolation
Dielectric isolation
Wafer bonding
Metallization
Definition
Multilevel metallization
Interconnection material
Metal requirement
Junction spiking
Stress migration
Electromigration
Planarization
Definition
Process of planarization
Working principle
NMOS IC technology
Definition & basic concepts
Fabrication process for NMOS
Advantages/Disadvantages of NMOS
CMOS IC technology
Basic concepts
Fabrication process for CMOS
Advantages/Disadvantages
Bipolar IC technology
Basic concepts
Steps of fabrication
Advantages and limitations
FINFET & GAA IC technology
Basic Concepts
Steps of Fabrication
Advantages and Limitations
Fault diagnosis & characterization technique
Basic concepts
Combinational fault diagnosis methods
Sequential fault diagnosis methods
Characterization techniques
Who Should Attend:
Anyone wanting an understanding of semiconductor process integration
Next Schedule Date and Location:
Only offer at clients' site
Price:
$13,900 USD for 14 students) 2 day class
Contact us if interested in an on site training program