Plasma Etching ALE & RIE

Course Overview

This course discusses the fundamentals of plasma assisted phenomena and reactive ion etching (RIE) processes. The emphasis is on the physical and chemical processes that determine the consequences of a reactive gas plasma/surface interaction. The role of energetic ions as encountered in RIE systems is discussed in detail and the factors which influence anisotropy of etching are highlighted. Plasma-assisted etching equipment is described including capacitively coupled, inductively coupled and wave-generated plasmas sources. This course is intended for scientists, technicians and others working with or interested in the dry etching of materials in reactive gas glow discharges, particularly those who do not have extensive experience in the field.

The instructor discusses the applied aspects of plasma-assisted etching from a general point of view. The emphasis is on mechanistic understanding. The etching of Si and its compounds is covered in detail. The chemistries used in the etching of other technology-related materials such as Al, organics, and III-V compounds are summarized. Other topics presented include selectivity, loading, ARDE and feature scale problems, damage, and issues associated with high-density plasma RIE. A section on plasma diagnostics and ion-beam based etching methods is briefly discussed.

Topics Covered

Learning Objectives

Who Should Attend

Scientists, technicians and others working with or interested in the dry etching of materials in reactive gas glow discharges, particularly those who do not have extensive experience in the field. This course is ideal for process engineers, equipment engineers, and anyone involved in plasma etching processes in semiconductor manufacturing.

Prerequisites

Basic understanding of semiconductor manufacturing processes is recommended. No extensive experience in plasma etching is required as the course covers fundamental concepts.